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| semix ? 33c spt igbt modules semix 553gd128dc preliminary data features ! " ! ! # typical applications $ " % " & % ! ' ( ) * gd absolute maximum ratings ' + , - ! % symbol conditions values units igbt . ' ( ( / ' + 1 ( , + 2 ( 3 1 ( $ / 4 5 ! . 6 ( ( $ 7 8 ' ( " 9 - : 4 $ / : ; < 2 ( = = = > . + ( . ' + , $ - . = 2 ( ( ( inverse diode / ? ' + 1 ( , 2 ' ( ' 1 ( $ / ? 4 5 ! . 6 ( ( $ / ? 5 ! . ( @ = @ 9 ' + , ' 3 ( ( $ characteristics ' + , - ! % symbol conditions min. typ. max. units igbt 7 7 - / . ' $ 2 - + + 6 - + / 7 ( - - 9 ' + . ' + , ( - 3 $ : 9 ' + . ' + , . ( - a . - . + . - ( + 7 . + - 9 ' + . ' + , 3 2 - b 2 + c / 3 ( ( $ - 7 . + - 9 ' + . ' + , - ! " . - a ' - 3 ' - 3 + ' - + + % % ' b ? 7 ( - ' + - . 5 * ' ? . - 3 ? d ' ( 4 e > e ! - ' + . ' + , ( - b . c % f 6 ( ( - / 3 ( ( $ . 1 + f 6 + % f 7 8 . + 6 3 + f 1 ( 4 7 4 7 3 c - 9 . ' + , ' b 3 3 g inverse diode ? / ? 3 ( ( $ @ 7 ( @ 9 ' + . ' + , - ! " ' . - 1 ' - + ' - 3 : 9 ' + . ' + , . - . . - 2 + . - ' + 9 ' + . ' + , 3 3 - + 3 - + c / 4 4 5 / ? 3 ( ( $ @ 9 ' + . ' + , 3 ' 2 $ h % f % + 2 ( ( $ f i 2 6 i 7 . + . b g thermal characteristics 4 9 ! / 7 j ( - ( 6 k f l 4 9 m ! / " m % ( - . . k f l 4 9 ? m ! ? l m k f l 4 ! % ( - ( . 2 k f l temperature sensor 4 ' + ' + , + 8 + n ) o j ' + f 1 + 4 ' 4 . p ! q j . f ' . f . r @ q k r @ j 3 2 ' ( k mechanical data 5 f 5 ) 5 + f 5 6 3 f ' - + + f + ; 1 6 6 semix 553gd128dc 1 21-04-2006 ges ? by semikron fig. 1 typ. output characteristic, inclusive r cc'+ ee' fig. 2 rated current vs. temperature i c = f (t c ) fig. 3 typ. turn-on /-off energy = f (i c ) fig. 4 typ. turn-on /-off energy = f (r g ) fig. 5 typ. transfer characteristic fig. 6 typ. gate charge characteristic semix 553gd128dc 2 21-04-2006 ges ? by semikron fig. 7 typ. switching times vs. i c fig. 8 typ. switching times vs. gate resistor r g fig. 9 transient thermal impedance of igbt fig. 10 transient thermal impedance of fwd fig. 11 typ. cal diode forward characteristic fig. 12 typ. cal diode peak reverse recovery current semix 553gd128dc 3 21-04-2006 ges ? by semikron fig. 13 typ. cal diode recovered charge 5 s 3 3 7 m 5 s 3 3 this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix. this technical information specifies semiconductor devices but promises no characteristics. no warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. semix 553gd128dc 4 21-04-2006 ges ? by semikron |
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